advanced power n-channel enhancement mode electronics corp. power mosfet lower gate charge bv dss 400v 100% avalanche rated r ds(on) 16 fast switching performance i d 0.5a simple drive requirement description absolute maximum ratings symbol units v ds drain-source voltage v v gs gate-source voltage v i d @t c =25 continuous drain current, v gs @ 10v a i d @t c =100 continuous drain current, v gs @ 10v a i dm pulsed drain current 1 a p d @t c =25 total power dissipation w w/ e as single pulse avalanche energy 2 mj t stg t j operating junction temperature range thermal data symbol value units rthj-c maximum thermal resistance, junction-case 7.2 /w rthj-a maximum thermal resistance, junction-ambient 110 /w data & specifications subject to change without notice 201018072-1/4 20 linear derating factor AP01N40J 0.5 0.14 0.5 0.4 rohs-compliant product 2 17.4 parameter rating 400 -55 to 150 storage temperature range -55 to 150 parameter g d s the to-251 package is widely preferred for commercial-industrial through-hole applications. g d s to-251(j) advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on- resistance and cost-effectiveness.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =1ma 400 - - v r ds(on) static drain-source on-resistance 3 v gs =10v, i d =0.5a - - 16 v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =0.5a - 0.5 - s i dss drain-source leakage current (t j =25 o c) v ds =400v, v gs =0v - - 10 ua drain-source leakage current (t j =150 o c) v ds =320v , v gs =0v - - 100 ua i gss gate-source leakage v gs =20v - - 100 na q g total gate charge 3 i d =1a - 2.9 4.6 nc q gs gate-source charge v ds =320v - 0.6 - nc q gd gate-drain ("miller") charge v gs =10v - 0.6 - nc t d(on) turn-on delay time 3 v dd =200v - 7.7 - ns t r rise time i d =1a - 12 - ns t d(off) turn-off delay time r g =3.3 ? v gs =10v - 23 - ns t f fall time r d =200 -73- ns c iss input capacitance v gs =0v - 76 125 pf c oss output capacitance v ds =25v - 11 - pf c rss reverse transfer capacitance f=1.0mhz - 4 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 3 i s =2a, v gs =0v - - 1.5 v t rr reverse recovery time i s =1a, v gs =0v - 260 - ns q rr reverse recovery charge di/dt=100a/s - 460 - nc notes: 1.pulse width limited by max. junction temperature. 2.starting t j =25 o c , v dd =50v , l=1mh , r g =25 3.pulse test AP01N40J 2/4 this product is an electrostatic sensitive, please handle with caution. this product has been qualified for consumer market. applications or uses as criterial component in life support device or system are not authorized.
fig 1. typical output characteristics fig 2. typical output characteristics fig 3. normalized bv dss v.s. junction fig 4. normalized on-resistance temperature v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3/4 AP01N40J 0.8 0.9 1 1.1 1.2 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss (v) 0 1 2 3 -50 0 50 100 150 t j , junction temperature ( o c ) normalized r ds(on) i d =0.5a v g =10v 0 0.2 0.4 0.6 0.8 1 1.2 0 4 8 12162024 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 9.0v 8.0v 7.0v v g = 6.0 v 0 0.1 0.2 0.3 0.4 0.5 0.6 04812162024 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 9.0v 8.0v 7.0v v g = 6.0 v 0.1 1 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j = 150 o ct j = 25 o c 0.8 1.2 1.6 2 2.4 -50 0 50 100 150 t j , junction temperature ( o c ) v gs(th) (v)
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4/4 AP01N40J 0.01 0.1 1 10 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0 4 8 12 16 01234 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =1a v ds =320v 1 10 100 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 10v q gs q gd q g charge
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